ECP Characterization of CdTe Grown by ELOG
A. Prociuk (1), R. Sporken (1,2), D. Grajewski (1), Y. Xin (1), F. Wiame (2), G. Brill (1), P. Boieriu (1), S. Rujirawat (1), N. K. Dhar (3) and S. Sivananthan (1)

1) Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, IL 60607-7059

2) Facultes Universitaires Notre-Dame de la Paix, Laboratoire Interdisciplinaire de Spectroscopie Electronique, B-5000 Namur (Belgium)

3) U.S. Army Research Laboratory, Adelphi, MD 20783-1197

The electron-channeling pattern (ECP) is a contrast pattern of bands produced in a scanning electron microscope (SEM). It provides crystallographic information about the sample under observation. The bands composing the ECP are dependent upon the orientations of and the spacing between parallel lattice planes. ECPs can thus be used, for example, to determine whether the sample has a single or multi-domain (twins) surface. The pattern's contrast has been explained assuming thermal diffuse scattering and core electron scattering as the primary mechanisms for backscattered (Spencer et. al. 1972) and secondary electron channeling respectively. Epitaxial lateral overgrowth (ELOG) is an experimental growth method by which a material is grown epitaxially on a substrate and then etched away in selected areas to create a pattern of "seeds" upon which the same material is grown again. CdTe was grown on a Si substrate. The CdTe seeds were grown for 35 minutes at 390oC at a substrate temperature of 387oC. Secondary electron imaging and ECPs are used to analyze the quality of two ELOG samples. Preliminary results suggest the formation of twins on one sample and the absence of twins on another.